TEMPERATURE-DEPENDENCE OF HALL-MOBILITY AND ELECTRICAL-CONDUCTIVITY IN SIMOX FILMS

被引：7

作者：

WYNCOLL, J

KANG, KN

CRISTOLOVEANU, S

HEMMENT, PLF

ARROWSMITH, RP

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 12期

关键词：

D O I：

10.1049/el:19840337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：485 / 486

页数：2

共 9 条

[1] SILICON ON SAPPHIRE IN FRANCE - A REVIEW OF THE PHYSICOCHEMICAL AND ELECTRICAL-PROPERTIES [J].

CRISTOLOVEANU, S ;

GHIBAUDO, G ;

KAMARINOS, G .

REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (02) :161-185

[2]

GLACCUM AE, 1983 ESSDERC CANT

[3] REGROWTH OF AMORPHOUS LAYERS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF OXYGEN [J].

HEMMENT, PLF ;

MAYDELLONDRUSZ, EA ;

STEPHENS, KG ;

SCOVELL, PD .

ELECTRONICS LETTERS, 1983, 19 (13) :483-485

[4]

HEMMENT PLF, 1983, SEP S ION SOURC ION

[5]

KILNER JA, 1983, 6TH INT C ION BEAM A

[6] TRANSPORT PROFILES, THE INFLUENCE OF INTERNAL-STRESS AND POTENTIAL FLUCTUATIONS IN THIN SILICON FILMS ON SAPPHIRE [J].

LEE, JH ;

CRISTOLOVEANU, S ;

CHOVET, A .

THIN SOLID FILMS, 1982, 89 (01) :13-18

[7] ELECTRON-SCATTERING PROFILES IN SOS FILMS MEASURED BY TEMPERATURE-DEPENDENT HALL-EFFECT [J].

LEE, JH .

ELECTRONICS LETTERS, 1981, 17 (16) :566-567

[8]

OHWADA K, 1982, SEMICONDUCTOR TECHNO, P23

[9]

PAVLOV NI, 1971, SOV PHYS SEMICOND+, V4, P1644

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