MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SEMIINSULATING POLYCRYSTALLINE OXYGEN-DOPED SILICON

被引：1

作者：

ALFORD, TL ^{[1
]}

YANG, DK ^{[1
]}

MASZARA, W ^{[1
]}

OZGUZ, VH ^{[1
]}

WORTMAN, JJ ^{[1
]}

ROZGONYI, GA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 04期

关键词：

D O I：

10.1149/1.2100612

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：998 / 1003

页数：6

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