LUMINESCENCE AND LATTICE-PARAMETER OF CUBIC GALLIUM NITRIDE

被引：47

作者：

SITAR, Z ^{[1
]}

PAISLEY, MJ ^{[1
]}

RUAN, J ^{[1
]}

CHOYKE, JW ^{[1
]}

DAVIS, RF ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1992年 / 11卷 / 05期

关键词：

D O I：

10.1007/BF00729406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：261 / 262

页数：2

共 17 条

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[2] CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE [J].

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[7]

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[8]

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[9] GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

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[10]

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