SOS ISLAND EDGE PROFILES FOLLOWING OXIDATION

被引:5
作者
LEE, SN [1 ]
KJAR, RA [1 ]
机构
[1] ROCKWELL INT CORP,3370 MIRALOMA AVE,ANAHEIM,CA 92803
关键词
D O I
10.1109/IRPS.1975.362673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:34 / 37
页数:4
相关论文
共 5 条
[1]   THIN-FILM SILICON - PREPATATION, PROPERTIES, AND DEVICE APPLICATIONS [J].
ALLISON, JF ;
DUMIN, DJ ;
HEIMAN, FP ;
MUELLER, CW ;
ROBINSON, PH .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1490-+
[2]   SCANNING ELECTRON-MICROSCOPE INVESTIGATION OF GLASS FLOW IN MOS INTEGRATED-CIRCUIT FABRICATION [J].
ARMSTRONG, WE ;
TOLLIVER, DL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (02) :307-310
[3]  
BLECH IA, 1970, 8TH P ANN REL S LAS, P144
[4]  
NABER CT, 1972, OCT EL SOC M MIAM BE
[5]   MULTILAYER METALLIZATION FOR LSI [J].
SANTORO, CJ ;
TOLLIVER, DL .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1403-&