REDUCTION OF THRESHOLD CURRENT-DENSITY OF 2.2-MU-M GAINASSB/ALGAASSB INJECTION-LASERS

被引:33
作者
CANEAU, C
SRIVASTAVA, AK
DENTAI, AG
ZYSKIND, JL
BURRUS, CA
POLLACK, MA
机构
关键词
D O I
10.1049/el:19860678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:992 / 993
页数:2
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