HIGH-TEMPERATURE CHARACTERISTIC T-O AND LOW-THRESHOLD CURRENT-DENSITY OF 1.3 MU-M INASP/INGAP/INP COMPENSATED STRAIN MULTIQUANTUM-WELL STRUCTURE LASERS

被引：25

作者：

OUGAZZADEN, A

MIRCEA, A

KAZMIERSKI, C

机构：

[1] France Telecom CNET-Paris B Laboratoire de Bagneux, 196, rue H. Ravera, BP 107

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 10期

关键词：

CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR JUNCTION LASERS;

D O I：

10.1049/el:19950567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high device quality material consisting of 10 compensated strained quantum well InAsP/InGaP structures was grown by MOCVD at atmospheric pressure. The estimated threshold current density for an infinite cavity length was 130A/cm(2) per well. A high characteristic temperature of 117K was obtained. To the authors' knowledge, this is the highest value for as-cleaved lasers at 1.3 mu m on InP substrates.

引用

页码：803 / 805

页数：3