EFFECT OF ATOMIC ORDERING AND COMPOSITION CHANGES ON THE ELECTRICAL-RESISTIVITY OF NB3AL, NB3SN, NB3GE, NB3IN, V3SI AND V3GA

被引：19

作者：

FLUKIGER, R ^{[1
]}

KUPFER, H ^{[1
]}

JORDA, JL ^{[1
]}

MULLER, J ^{[1
]}

机构：

[1] DEPT PHYS MAT COND,CH-1211 GENEVE,SWITZERLAND

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 02期

关键词：

D O I：

10.1109/TMAG.1987.1064862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：980 / 983

页数：4

共 27 条

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FLUKIGER, R .

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[7]

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[8]

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[9]

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[10]

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