SURFACE-TENSION OF A SI MELT - INFLUENCE OF OXYGEN PARTIAL-PRESSURE

被引：31

作者：

HUANG, XM

TOGAWA, S

CHUNG, SI

TERASHIMA, K

KIMURA, S

机构：

[1] TSUKUBA RES CONSORTIUM,JRDC,ERATO,KIMURA METAMELT PROJECT,TSUKUBA,IBARAKI 30026,JAPAN

[2] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA

[3] SHONAN INST TECHNOL,DEPT MAT SCI & CERAM TECHNOL,FUJISAWA,KANAGAWA 251,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 156卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)00207-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Surface tension of molten Si was measured by the sessile drop method in Ar atmosphere with different oxygen partial pressures. It was found that the surface tension of molten Si decreased with increasing temperature, and it was 825 mN/m at the melting point (about 1415 degrees C) in a pure Ar atmosphere. The surface tension also decreased with increasing oxygen partial pressure in the Ar atmosphere, and the temperature coefficient of the surface tension changed from -0.1 mN/(mK) to about -0.26 mN/(mK) with increasing oxygen partial pressure from 0 to 0.319 Torr.

引用

页码：52 / 58

页数：7

共 14 条

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