PEM EFFECT IN SILICON

被引：4

作者：

ISHIGAME, M

机构：

来源：

关键词：

D O I：

10.1143/JJAP.3.720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：720 / &

共 7 条

[1] PHOTOMAGNETOELECTRIC EFFECT IN GERMANIUM AND SILICON
BULLIARD, H
[J]. PHYSICAL REVIEW, 1954, 94 (06): : 1564 - 1566
[2] GARRETA O, 1956, PROGR SEMICONDUCTORS, V1, P167
[3] ISHIGAME M, 1964, JPN J APPL PHYS, V3, P250
[4] PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB
KURNICK, SW
ZITTER, RN
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 278 - 285
[5] PHOTOELECTROMAGNETIC AND PHOTOCONDUCTIVE EFFECTS IN LEAD SULPHIDE SINGLE CRYSTALS
MOSS, TS
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (408): : 993 - 1002
[6] PHOTOELECTROMAGNETIC AND PHOTODIFFUSION EFFECTS IN GERMANIUM
MOSS, TS
PINCHERLE, L
WOODWARD, AM
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (405): : 743 - 752
[7] PHOTOELECTROMAGNETIC EFFECT IN INSULATING CDS
SOMMERS, HS
BERRY, RE
SOCHARD, I
[J]. PHYSICAL REVIEW, 1956, 101 (03): : 987 - 988