ELECTRONIC-STRUCTURE OF BORON

被引：34

作者：

VANSCHILFGAARDE, M

HARRISON, WA

机构：

[1] Stanford Univ, Dep of Applied, Physics, Stanford, CA, USA, Stanford Univ, Dep of Applied Physics, Stanford, CA, USA

来源：

关键词：

ELECTRONIC STRUCTURE - TIGHT-BINDING - UNIVERSAL MATRIX ELEMENTS;

D O I：

10.1016/0022-3697(85)90025-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

(Edited Abstract)

引用

页码：1093 / 1100

页数：8

共 16 条

[1] [Anonymous], ELECTRONIC STRUCTURE
[2] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ICOSAHEDRAL BORON CLUSTER B-12
BAMBAKIDIS, G
WAGNER, RP
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1981, 42 (11) : 1023 - 1025
[3] SCALING OF THE HAMILTONIAN AND MOMENTUM IN SEMICONDUCTORS
BREY, L
TEJEDOR, C
VERGES, JA
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6840 - 6845
[4] STRUCTURE AND BONDING IN CRYSTALLINE BORON AND B12C3
BULLETT, DW
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03): : 415 - 426
[5] ELEMENTARY PREDICTION OF LINEAR COMBINATION OF ATOMIC ORBITALS MATRIX-ELEMENTS
FROYEN, S
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1979, 20 (06): : 2420 - 2422
[6] NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1981, 24 (10) : 5835 - 5843
[7] THEORY OF THE 2-CENTER BOND
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1983, 27 (06) : 3592 - 3604
[8] HARRISON WA, 1984 P INT C PHYS SE
[9] Hoard J.L., 1967, CHEM BORON ITS COMPO
[10] THE ELECTRONIC STRUCTURE OF AN ICOSAHEDRON OF BORON ATOMS
LONGUETHIGGINS, HC
ROBERTS, MD
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1955, 230 (1180): : 110 - 119