EPITAXIAL-GROWTH OF PROX THIN-FILMS ON SAPPHIRE BY PULSED LASER DEPOSITION

被引：3

作者：

LING, SH ^{[1
]}

AU, WS ^{[1
]}

TANG, YS ^{[1
]}

WONG, HK ^{[1
]}

机构：

[1] CHINESE UNIV HONG KONG,DEPT PHYS,SHA TIN,HONG KONG

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.352019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PrO(x) thin films have been grown epitaxially on r-plane sapphire by pulsed laser deposition. The films have (100) orientation if grown at 800-degrees-C, and twinned (111) at lower substrate temperatures. The lattice constant of the PrO(x) film can be varied by thermal treatment at different oxygen partial pressures. a axis-oriented YBa2Cu3O7-delta films have been grown epitaxially on (100) Pr6O11 layers.

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页码：4981 / 4983

页数：3

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