NONDESTRUCTIVE METHOD FOR REVEALING STACKING FAULTS IN EPITAXIAL SILICON

被引：7

作者：

DUDLEY, RH

机构：

来源：

关键词：

D O I：

10.1063/1.1713630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1360 / &

共 4 条

[1] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

[2]

Nomarski G., 1955, REV MET PARIS, V52, P121, DOI [10.1051/metal/195552020121, DOI 10.1051/METAL/195552020121]

[3] STACKING FAULTS IN EPITAXIAL SILICON [J].

QUEISSER, HJ ;

FINCH, RH ;

WASHBURN, J .

[4] MICROPLASMA BREAKDOWN AT STAIR-ROD DISLOCATIONS IN SILICON [J].

QUEISSER, HJ ;

GOETZBERGER, A .

PHILOSOPHICAL MAGAZINE, 1963, 8 (90) :1063-&