LONGITUDINAL-OPTICAL-PHONON ASSISTED TUNNELING IN TUNNELING BI-QUANTUM WELL STRUCTURES

被引：35

作者：

MUTO, S

INATA, T

TACKEUCHI, A

SUGIYAMA, Y

FUJII, T

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 21期

关键词：

D O I：

10.1063/1.104881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi-quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction-band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (less-than-or-equal-to 10 monolayers) barriers.

引用

页码：2393 / 2395

页数：3

共 17 条

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