CHARACTERIZATION OF CUALS2 FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引:21
作者
MORITA, Y
NARUSAWA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10A期
关键词
CUALS2; FILM; MOLECULAR BEAM EPITAXY; CHALCOPYRITE STRUCTURE; OPTICAL PROPERTIES; ELECTRICAL PROPERTIES;
D O I
10.1143/JJAP.31.L1396
中图分类号
O59 [应用物理学];
学科分类号
摘要
Undoped and As-doped CuAlS2 films have been grown on GaAs(100) substrates by molecular beam epitaxy, and their optical and electrical properties have been characterized. X-ray diffraction patterns show that the films grow epitaxially with the c-axis perpendicular to the substrate surface. Both undoped and As-doped CuAlS2 films have exhibited a near-band-edge emission around 3.4 eV with accompanying deep-level-related emissions at 77 K. An As-doped CuAlS2 film exhibits p-type conductivity with the lowest resistivity of 1 OMEGA . cm and the carrier concentration of 5 X 10(17) cm-3.
引用
收藏
页码:L1396 / L1398
页数:3
相关论文
共 8 条
[1]   CATHODOLUMINESCENCE AND ELECTRICAL-PROPERTIES OF CUALS2 [J].
AKSENOV, IA ;
GULAKOV, IR ;
LIPNITSKII, VI ;
LUKOMSKII, AI ;
MAKOVETSKAYA, LA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 115 (01) :K113-K116
[2]   ELECTRICAL-PROPERTIES OF CADMIUM AND ZINC DOPED CUALS2 [J].
AKSENOV, IA ;
MAKOVETSKAYA, LA ;
SAVCHUK, VA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 108 (01) :K63-K65
[3]  
DONOHUE PC, 1974, J ELECTROCHEM SOC, V121, P829, DOI 10.1149/1.2401929
[4]   MOVPE GROWTH AND CHARACTERIZATION OF I-III-VI2 CHALCOPYRITE COMPOUNDS [J].
HARA, K ;
SHINOZAWA, T ;
YOSHINO, J ;
KUKIMOTO, H .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :771-775
[5]   PREPARATION AND PROPERTIES OF SINGLE CRYSTAL CUALS2 AND CUALSE2 [J].
HONEYMAN, WN .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (08) :1935-&
[6]   GROWTH AND CHARACTERIZATION OF CU-AL-SE SYSTEM BY MBE [J].
MORITA, Y ;
NARUSAWA, T .
JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :811-815
[7]   ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS [J].
TELL, B ;
SHAY, JL ;
KASPER, HM .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2469-&
[8]   DEPENDENCE OF ENERGY-GAP ON X IN CUALXGA1-XS2 MIXED-CRYSTAL SYSTEM [J].
TSUBOI, N ;
KOBAYASHI, S ;
KANEKO, F ;
MARUYAMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06) :972-978