SEMICONDUCTOR MODULATORS AND OPTICAL SWITCHES

被引：2

作者：

CAVENETT, BC

WANG, SY

PRIOR, KA

机构：

[1] Department of Physics, Heriot-Watt University, Edinburgh

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 187卷 / 02期

关键词：

D O I：

10.1002/pssb.2221870212

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. The development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells is reviewed. In particular, the characterisation of ZnSe/ZnCdSe/ZnSe devices is discussed.

引用

页码：347 / 353

页数：7

共 6 条

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CAVENETT, BC ;

PRIOR, KA .

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[2]

MILLER DAB, 1990, OPT QUANT ELECTRON, V22, P561

[3] ELECTROABSORPTION IN II-VI MULTIPLE QUANTUM-WELLS [J].

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[4]

WAGN SY, 1994, J CRYST GROWTH, V138, P647

[5] ROOM-TEMPERATURE ZNSE/ZNCDSE BISTABLE SELF-ELECTRO-OPTIC EFFECT DEVICE OPERATING AT 488 NM [J].

WANG, SY ;

HORSBURGH, G ;

THOMPSON, P ;

HAUKSSON, I ;

MULLINS, JT ;

PRIOR, KA ;

CAVENETT, BC .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :857-859

[6] ZNSE-ZNCDSE QUANTUM CONFINED STARK-EFFECT MODULATORS [J].

WANG, SY ;

KAWAKAMI, Y ;

SIMPSON, J ;

STEWART, H ;

PRIOR, KA ;

CAVENETT, BC .

APPLIED PHYSICS LETTERS, 1993, 62 (15) :1715-1717

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