POTENTIAL DISTRIBUTIONS IN METAL-SEMICONDUCTOR AND P-I-N STRUCTURES ON A-SI-H BY CAPACITIVE TECHNIQUES

被引：6

作者：

LAHRI, R

HAN, MK

ANDERSON, WA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 05期

关键词：

D O I：

10.1109/T-ED.1982.20795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：889 / 893

页数：5

共 7 条

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[2]

Han M.-K., 1981, IEEE Electron Device Letters, VEDL-2, P198, DOI 10.1109/EDL.1981.25400

[3] INTERPRETATION OF CAPACITANCE AND CONDUCTANCE MEASUREMENTS ON METAL-AMORPHOUS SILICON BARRIERS [J].

SNELL, AJ ;

MACKENZIE, KD ;

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SPEAR, WE .

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[4] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION [J].

SPEAR, WE ;

LECOMBER, PG ;

SNELL, AJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03) :303-317

[5] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON - DRIFT MOBILITY AND JUNCTION CAPACITANCE [J].

TIEDJE, T ;

WRONSKI, CR ;

ABELES, B ;

CEBULKA, JM .

SOLAR CELLS, 1980, 2 (03) :301-318

[6] INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].

VIKTOROVITCH, P ;

MODDEL, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4847-4854

[7]

WRONSKI CR, 1977, J ELECTRON MATERIAL, V6, P95

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