HYDROGEN-INITIATED NUCLEATION AND GROWTH OF HYDROGENATED AMORPHOUS-SILICON ON GRAPHITE

被引：1

作者：

IKUTA, K

TOYOSHIMA, Y

YAMASAKI, S

MATSUDA, A

TANAKA, K

机构：

[1] UNIV TSUKUBA, FAC MAT SCI, TSUKUBA, IBARAKI 305, JAPAN

[2] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 3B期

关键词：

SCANNING TUNNELING MICROSCOPY; RAMAN SCATTERING; NUCLEATION; INITIAL GROWTH; HYDROGENATED AMORPHOUS SILICON; GRAPHITE; HYDROGEN RADICAL; INHOMOGENEOUS GROWTH;

D O I：

10.1143/JJAP.34.L379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Initial nucleation and formation processes of a-Si:H clusters on single-crystal graphite have been studied by ultrahigh-vacuum scanning tunneling microscopy and Raman scattering spectroscopy. It is critically demonstrated that hydrogen radicals coming from the SiH4 plasma create structural defects on the surface of the single-crystal graphite which act as absorption sites for SiH3 radicals diffusing on the surface. On the basis of this picture, spatially-inhomogeneous formation of a-Si:H clusters prior to full coverage of the surface is also discussed.

引用

页码：L379 / L381

页数：3

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