FORMATION OF HIGH ASYMMETRIC OXIDE TUNNELLING BARRIERS ON NIOBIUM AND TANTALUM

被引：5

作者：

HAHN, A

BRUNNER, M

EKRUT, H

机构：

来源：

THIN SOLID FILMS | 1983年 / 102卷 / 03期

关键词：

D O I：

10.1016/0040-6090(83)90089-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：221 / 230

页数：10

共 17 条

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[5]

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[10] ZERO-BIAS CONDUCTANCE DIP AND PHONON FEATURES IN THE SUPERCONDUCTOR DENSITY OF STATES OBSERVED ON TANTALUM-BASED AND NIOBIUM-BASED TUNNELING JUNCTIONS [J].

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