DESIGN OF A 16-384-BIT SERIAL CHARGE-COUPLED MEMORY DEVICE

被引：8

作者：

CHOU, S ^{[1
]}

机构：

[1] INTEL CORP,SANTA CLARA,CA 95051

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 01期

关键词：

D O I：

10.1109/JSSC.1976.1050669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：10 / 18

页数：9

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