OPTICAL-PROPERTIES OF GAINAS INP MULTI-QUANTUM-WELLS GROWN BY LOW-PRESSURE MOVPE

被引：10

作者：

LAURENTI, JP

CAMASSEL, J

REYNES, B

GRUTZMACHER, D

WOLTER, K

KURZ, H

机构：

[1] Groupe d'Etude des Semiconducteurs, Université des Sciences et Techniques du Languedoc

[2] Institute of Semiconductor Electronics, Aachen Technical University

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 03期

关键词：

D O I：

10.1088/0268-1242/5/3/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have systematically investigated the absorption and derivative absorption of a series of GaInAs/InP multi-quantum well structures (MQWS) grown by low-pressure (LP) metal-organic vapour-phase epitaxy (MOVPE). Excitonic transitions between n>or=1 confined states (electron-heavy holes and electron-light holes) have been resolved, and are seen clearly even at room temperature. Comparison with photoluminescence (PL) data shows Stokes shifts as weak as 4 meV, indicating minor potential fluctuations. These results confirm LP-MOVPE as an attractive approach for growing sophisticated structures over large substrates for optoelectronic device production. Each intrinsic excitonic transition energy was carefully determined by performing theoretical fits in the light of the two-dimensional theory of direct allowed excitonic transitions. Comparing with recent theoretical results, they find a satisfactory agreement but, in some cases, finite departures of the alloy compositions or quantum well widths with respect of the nominal values have been found. This results in sizable shifts of the series of excitonic transitions with respect to the expected positions, which establishes excitonic absorption as a quantitative and non-destructive tool for checking the wells' homogeneity, composition and thickness.

引用

页码：222 / 228

页数：7

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