NONEQUILIBRIUM DEVICES FOR INFRARED DETECTION

被引：214

作者：

ASHLEY, T

ELLIOTT, CT

机构：

来源：

关键词：

D O I：

10.1049/el:19850321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：451 / 452

页数：2

共 7 条

[1] ACCUMULATION EFFECTS AT CONTACTS TO N-TYPE CADMIUM MERCURY TELLURIDE PHOTOCONDUCTORS
ASHLEY, T
ELLIOTT, CT
[J]. INFRARED PHYSICS, 1982, 22 (06): : 367 - 376
[2] RECOMBINATION IN CADMIUM MERCURY TELLURIDE PHOTODETECTORS
BAKER, IM
CAPOCCI, FA
CHARLTON, DE
WOTHERSPOON, JTM
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1475 - 1480
[3] BEATTIE AR, 1962, J PHYS CHEM SOLIDS, V24, P1049
[4] CARRIER CONCENTRATION DISTURBANCES IN SEMICONDUCTORS
LOW, GGE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (05): : 310 - 314
[5] CHARACTERISTICS OF NORMAL-TYPE INSB
PINES, MY
STAFSUDD, OM
[J]. INFRARED PHYSICS, 1979, 19 (05): : 563 - 569
[6] THEORY OF THE SWEPT INTRINSIC STRUCTURE
READ, WT
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (06): : 1239 - 1284
[7] SPUTTER CLEANING AND DRY OXIDATION OF CDTE, HGTE, AND HG0.8CD0.2TE SURFACES
SOLZBACH, U
RICHTER, HJ
[J]. SURFACE SCIENCE, 1980, 97 (01) : 191 - 205