HIGH-PERFORMANCE INP GUNN DEVICES FOR FUNDAMENTAL-MODE OPERATION IN D-BAND (110-170-GHZ)

被引：30

作者：

EISELE, H

HADDAD, GI

机构：

[1] Department of Electrical Engineering & Computer Science, Solid-State Electronics Laboratory, The University of Michigan, Ann, Arbor

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 11期

关键词：

Manuscript received May 15; 1995. This work was supported in part by the Center of Space Terahertz Technology under contract NAGW 1334. The authors are with the Department of Electrical Engineering & Computer Science; Solid-state Electronics Laboratory; The University of Michigan; Ann Arbor; MI 48109-2122 USA. IEEE Log Number 9414647;

D O I：

10.1109/75.473534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP Gunn devices with an n(+)nn(+) structure and a graded doping profile in the active region were designed, fabricated, and tested for fundamental-mode operation at D-band frequencies. Improved heat dissipation significantly increased the available RF output power and power levels of more than 90 mW up to frequencies around 135 GHz, more than 130 mW at 131.7 GHz, and more than 60 mW at 151 GHz in fundamental-mode operation. These are the highest RF power levels reported to date from any Gunn devices. These InP Gunn devices with dc-to-RF conversion efficiencies up to 2.5% around 132 GHz also exhibit excellent noise performance and the typical phase noise up to the highest RP power levels is well below -100 dBc/Hz, measured at a frequency off-carrier of 500 kHz.

引用

页码：385 / 387

页数：3

共 11 条

[1]

Kamoua R., Eisele H., Haddad G.I., D-Band (110-170 GHz) InP Gunn devices, Solid-State Electron., 36, pp. 1547-1555, (1993)

[2]

Eisele H., Haddad G.I., GaAs single-drift flat-profile IMPATT diodes for CW operation in D band, Electron. Lett., 28, pp. 2176-2177, (1992)

[3]

D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz, Electron. Lett., 30, pp. 1950-1951, (1994)

[4]

Ondria J., Ross R.L., Improved performance of fundamental and second-harmonic MMW oscillators through active doping concentration contouring, 1987 IEEE MTT-S Dig., pp. 977-980, (1987)

[5]

Eisele H., Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks, Solid-State Electron., 32, pp. 253-257, (1989)

[6]

Friscourt M.R., Rolland P.A., Optimum design of n+-n-n+ InP devices in the millimeter-range frequency limitation RF performances, IEEE Electron Dev. Lett., EDL-4, pp. 135-137, (1983)

[7]

Eddison I.G., Indium phosphide and gallium arsenide transferred-electron devices, Infrared and Millimeter Waves, 11, pp. 1-59, (1984)

[8]

Lee D.H., Ying R.S., Ion-implanted complementary IMPATT diodes for D-band, Proc. IEEE, 62, pp. 1295-1296, (1974)

[9]

Chang K., Thrower W.F., Hayashibara G.M., Millimeter-wave silicon IMPATT sources and combiners for the 110-260 GHz range, IEEE Trans. Microwave Theory Tech., MTT-29, pp. 1278-1284, (1981)

[10]

Crowley J.D., Hang C., Dalrymple R.E., Tringali D.R., Fank F.B., Wandinger L., Wallace H.B., 140 GHz indium phosphide Gunn diode, Electron. Lett., 30, pp. 499-500, (1994)

← 1 2 →