THEORETICAL-ANALYSIS OF EEL SPECTRA FROM AN N-TYPE GAAS SURFACE WITH A BAND BENDING

被引:16
作者
INAOKA, T [1 ]
CHIHARA, T [1 ]
机构
[1] HIROSHIMA UNIV,FAC SCI,DEPT PHYS,NAKA KU,HIROSHIMA 730,JAPAN
关键词
D O I
10.1016/0039-6028(89)90037-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:71 / 92
页数:22
相关论文
共 18 条
[1]   EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J].
BARAFF, GA ;
APPELBAUM, JA .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :475-+
[2]  
EHLERS DH, 1988, PHYS REV B, V37, P1019, DOI 10.1103/PhysRevB.37.1019.2
[3]   SURFACE-PLASMONS ON N-TYPE SEMICONDUCTORS - INFLUENCE OF DEPLETION AND ACCUMULATION LAYERS [J].
EHLERS, DH ;
MILLS, DL .
PHYSICAL REVIEW B, 1987, 36 (02) :1051-1067
[4]   SELF-CONSISTENT CALCULATIONS OF DEPLETION-LAYER AND ACCUMULATION-LAYER PROFILES IN NORMAL-TYPE GAAS [J].
EHLERS, DH ;
MILLS, DL .
PHYSICAL REVIEW B, 1986, 34 (06) :3939-3947
[5]   OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].
GRAYGRYCHOWSKI, ZJ ;
STRADLING, RA ;
EGDELL, RG ;
DOBSON, PJ ;
JOYCE, BA ;
WOODBRIDGE, K .
SOLID STATE COMMUNICATIONS, 1986, 59 (10) :703-706
[6]   APPLICATION OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY TO MBE GROWN GAAS(100) [J].
GRAYGRYCHOWSKI, ZJ ;
EGDELL, RG ;
JOYCE, BA ;
STRADLING, RA ;
WOODBRIDGE, K .
SURFACE SCIENCE, 1987, 186 (03) :482-498
[7]   INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J].
HASS, M ;
HENVIS, BW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1099-+
[8]  
Ibach H., 1982, ELECTRON ENERGY LOSS
[9]   THEORETICAL ANALYSES OF EELS FROM AN N-TYPE INSB SURFACE [J].
INAOKA, T ;
NEWNS, DM ;
EGDELL, RG .
SURFACE SCIENCE, 1987, 186 (1-2) :290-308
[10]   DIELECTRIC RESPONSE OF A DEGENERATE POLAR SEMICONDUCTOR SURFACE [J].
INAOKA, T .
SURFACE SCIENCE, 1988, 198 (03) :491-508