EFFECTS OF DEPOSITION TEMPERATURE AND HYDROGEN EVOLUTION ON LIGHT-INDUCED DEFECTS IN A-SI-H

被引：13

作者：

OHSAWA, M

HAMA, T

ICHIMURA, T

AKASAKA, T

SAKAI, H

ISHIDA, S

UCHIDA, Y

机构：

[1] Fuji Electric Corporate Research, & Development Ltd, Yokosuka, Jpn, Fuji Electric Corporate Research & Development Ltd, Yokosuka, Jpn

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

ACKNOWLEDGEMENT The authors are grateful to Dr. H. Haruki of Fuji Electric C. R. D. Ltd. for his helpful advices. This work was supported by the New Energy Development Organization under the Sunshine Project;

D O I：

10.1016/0022-3093(85)90684-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：401 / 404

页数：4

共 5 条

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[2]

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[5] KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].

STUTZMANN, M ;

JACKSON, WB ;

TSAI, CC .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1075-1077

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