NOVEL HBT WITH REDUCED THERMAL IMPEDANCE

被引：14

作者：

HILL, D

KHATIBZADEH, A

机构：

[1] Texas Instruments Corporate Research and Development, Dallas

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 11期

关键词：

D O I：

10.1109/75.473538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heterojunction bipolar transistors have been fabricated using a novel process in which the majority of the front side of the chip is metallized to serve as the groundplane. The completed chip is assembled inverted so that the emitters are next to the heat sink; base and collector are contacted using through-wafer vias and microstrip lines on the back side of the chip. These devices show a 50% reduction in thermal impedance compared to conventionally fabricated devices and have achieved power densities of 10 W/mm of emitter length. Such devices are expected to have substantially lower emitter inductance as well, which may lead to improved gain at higher frequencies.

引用

页码：373 / 375

页数：3

共 5 条

[1]

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[2]

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[3]

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[4]

Liu W., Khatibzadeh A., The collapse of current gain in multi-finger heterojunction bipolar transistors: Its substrate temperature dependence, instability criteria, and modeling, IEEE Trans. Electron Dev., 41, 10, pp. 1698-1707, (1994)

[5]

Amamiya Y., Kim C.-W., Goto N., Tanaka S., Furuhata N., Shimawaki H., Honjo K., Microwave/millimeter-wave power HBTs with regrown extrinsic base layers, 1994 IEEE Int. Electron Devices Meet. Dig., pp. 199-202, (1994)

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