HYPERFINE INTERACTION AND CHANNELING STUDIES OF IMPURITIES IMPLANTED IN SILICON

被引:9
作者
DEWAARD, H
KEMERINK, GJ
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90249-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:210 / 218
页数:9
相关论文
共 30 条
[21]   IMPLANTATION INDUCED DIAMOND TO AMORPHOUS-CARBON TRANSITION STUDIED BY CONVERSION ELECTRON MOSSBAUER-SPECTROSCOPY [J].
SAWICKI, JA ;
SAWICKA, BD .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :465-469
[22]   DIFFUSIVE MOTIONS IN WATER AND COLD NEUTRON SCATTERING [J].
SINGWI, KS ;
SJOLANDER, A .
PHYSICAL REVIEW, 1960, 119 (03) :863-871
[23]  
Van Rossum M., 1981, Nuclear and Electron Resonance Spectroscopies Applied to Materials Science. Proceedings of the Symposium, P359
[24]   MOSSBAUER STUDY OF THE AMORPHOUS LAYER IN ION-IMPLANTED DIAMOND [J].
VANROSSUM, M ;
LANGOUCHE, G ;
DEBRUYN, J ;
DEPOTTER, M ;
COUSSEMENT, R .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :407-411
[25]   OBSERVATION OF THE AMORPHIZATION PROCESS IN DIAMOND BY MOSSBAUER-SPECTROSCOPY [J].
VANROSSUM, M ;
BRUYN, JD ;
LANGOUCHE, G ;
DEPOTTER, M ;
COUSSEMENT, R .
PHYSICS LETTERS A, 1979, 73 (02) :127-128
[26]   UNUSUAL DYNAMICAL PROPERTIES OF SELF-INTERSTITIALS TRAPPED AT CO IMPURITIES IN AL [J].
VOGL, G ;
MANSEL, W ;
DEDERICHS, PH .
PHYSICAL REVIEW LETTERS, 1976, 36 (25) :1497-1500
[27]   SITE-SELECTIVE DOPING OF COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION OF RADIOACTIVE NUCLEI [J].
WEYER, G ;
PETERSEN, JW ;
DAMGAARD, S ;
NIELSEN, HL ;
HEINEMEIER, J .
PHYSICAL REVIEW LETTERS, 1980, 44 (03) :155-157
[28]   RADIATION DEFECTS IN ION-IMPLANTED SILICON .1. MOSSBAUER-SPECTROSCOPY OF SN-119 DEFECT STRUCTURES FROM IMPLANTATIONS OF RADIOACTIVE ANTIMONY [J].
WEYER, G ;
LARSEN, AN ;
HOLM, NE ;
NIELSEN, HL .
PHYSICAL REVIEW B, 1980, 21 (11) :4939-4950
[29]   THE NATURE OF RADIOGENIC SN DEFECTS IN GROUP-IV ELEMENTS [J].
WEYER, G ;
PETERSEN, JW ;
DAMGAARD, S .
HYPERFINE INTERACTIONS, 1981, 10 (1-4) :775-779
[30]  
WEYER G, 1980, HYPERFINE INTERACT, V7, P449