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INJECTION-LEVEL STUDIES IN NEUTRON-IRRADIATED SILICON

被引：19
作者：
CURTIS, OL
GERMANO, CA
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1967年 / NS14卷 / 06期
关键词：
D O I：
10.1109/TNS.1967.4324777
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：68 / +
页数：1
相关论文
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[2]   EXPLANATION FOR DISCREPANCY IN RECOMBINATION LEVEL POSITIONS IN IRRADIATED N-TYPE GE REPORTED BY VARIOUS OBSERVERS [J].
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[3]  
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CURTIS, OL .
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[8]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
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