BAND OFFSET IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS CALCULATED WITH THE SP3S-STAR TIGHT-BINDING MODEL

被引：23

作者：

FU, Y ^{[1
]}

CHAO, KA ^{[1
]}

机构：

[1] UNIV TRONDHEIM,NORWEGIAN INST TECHNOL,INST PHYS,N-7034 TRONDHEIM,NORWAY

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.43.4119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By incorporating a block-decimation method to the sp3s* tight-binding model, we have studied the evolution of Al(x)Ga(1-x)As electronic band structure as a function of Al composition, including the compositional correlation effect. Using the experimental data of a GaAs/AlAs multiple quantum well, we obtain the band edges of an Al(x)Ga(1-x)As alloy as functions of x, from which the band offsets DELTA-E(V) and DELTA-E(C) as well as the band-offset coefficient Q = DELTA-E(C)/(DELTA-E(C) + DELTA-E(V)) are derived for arbitrary Al concentration. The result agrees well with experiment.

引用

页码：4119 / 4124

页数：6

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