GAAS FIELD EMITTER ARRAYS

被引：8

作者：

BAKHTIZIN, RZ

GHOTS, SS

RATNIKOVA, EK

机构：

[1] Department of Physical Electronics, Bashkir State University, 450074, Ufa

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 10期

关键词：

D O I：

10.1109/16.88534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reports on technological peculiarities of fabrication of large-area gallium arsenide multipoint cathodes; the results of emission characteristics investigation are described. Expressions for the noise power spectral density function and the time constant of degradation for such cathode arrays have been obtained.

引用

页码：2398 / 2400

页数：3

共 6 条

[1] BAKHTISIN RZ, 1984, ELECTRONNAYA TEKNIKA, V173, P72
[2] BAKHTISIN RZ, 1984, RADIOTEKH ELEKTRON+, V4, P51
[3] RECENT RESULTS OF MODELING OF STATISTIC CHARACTERISTICS OF SEMICONDUCTOR FIELD EMITTERS
BAKHTIZIN, RZ
GHOTS, SS
CHERNINYAKHNUK, IM
[J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-6): : 203 - 208
[4] KLIMIN AI, 1976, IZV AKAD NAUK SSR F, V40, P1570
[5] FABRICATION AND SOME APPLICATIONS OF LARGE-AREA SILICON FIELD-EMISSION ARRAYS
THOMAS, RN
WICKSTROM, RA
SCHRODER, DK
NATHANSON, HC
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (02) : 155 - +
[6] VANDERZIEL A, 1976, NOISE MEASUREMENTSJ

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