共 30 条
[1]
IDENTIFICATION OF VACANCY DEFECTS IN COMPOUND SEMICONDUCTORS BY CORE-ELECTRON ANNIHILATION - APPLICATION TO INP
[J].
PHYSICAL REVIEW B,
1995, 51 (07)
:4176-4185
[2]
POSITRON-ANNIHILATION STUDIES OF NEUTRAL AND NEGATIVELY CHARGED AS VACANCIES IN GAAS
[J].
PHYSICAL REVIEW B,
1994, 50 (04)
:2188-2199
[5]
CHIBA T, 1995, MATER SCI FORUM, V175-, P327, DOI 10.4028/www.scientific.net/MSF.175-178.327
[6]
Chiba T., 1989, Positron Annihilation, P674
[7]
INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON
[J].
PHYSICAL REVIEW B,
1976, 14 (07)
:2709-2714
[8]
DANNEFAER S, 1990, DEFECT CONTROL SEMIC, P1561
[10]
HASEGAWA M, 1995, APPL PHYS A-MATER, V61, P65, DOI 10.1007/BF01538213