Positron-annihilation 2D-ACAR study of divacancy and vacancy-oxygen pairs in Si

被引:13
作者
Hasegawa, M [1 ]
Chiba, T [1 ]
Kawasuso, A [1 ]
Akahane, T [1 ]
Suezawa, M [1 ]
Yamaguchi, S [1 ]
Sumino, K [1 ]
机构
[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN
来源
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词
positron annihilation; angular correlation; silicon; divacancy; vacancy-oxygen complex;
D O I
10.4028/www.scientific.net/MSF.196-201.1481
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional angular correlation of positron annihilation radiation (2D-ACAR) experiments have been performed on electron-irradiated Si single crystals containing divacancies with the definite charge states, V-2(-2), V-2(-1) and V-2(0), from 15K to 295K. The 2D-ACAR spectra of unirradiated crystals have been also obtained and show characteristic anisotropies. Using these anisotropies, the 2D-ACAR spectra associated with the divacancies are separated from the partial bulk contribution. The 2D-ACAR spectra for the various charge states are practically isotropic and are very close to each other. However, using a specimen with oriented divacancies V-2(-1), we have obtained a small but definite anisotropy from the divacancies V-2(-1). The small increase in the FWHM width of the 2D-ACAR spectra from the divacancies is observed with decreasing temperature. The trapped fractions at the divacancies increase remarkably with decreasing temperature, not only for negative but also neutral divacancies. The 2D-ACAR spectra from vacancy-oxygen complexes is also obtained. These experimental 2D-ACAR spectra are expected to provide useful and potential information on electronic and atomistic structures of the divacancies in Si and need theoretical calculations, such as first-principle ones.
引用
收藏
页码:1481 / 1489
页数:9
相关论文
共 30 条
[1]   IDENTIFICATION OF VACANCY DEFECTS IN COMPOUND SEMICONDUCTORS BY CORE-ELECTRON ANNIHILATION - APPLICATION TO INP [J].
ALATALO, M ;
KAUPPINEN, H ;
SAARINEN, K ;
PUSKA, MJ ;
MAKINEN, J ;
HAUTOJARVI, P ;
NIEMINEN, RM .
PHYSICAL REVIEW B, 1995, 51 (07) :4176-4185
[2]   POSITRON-ANNIHILATION STUDIES OF NEUTRAL AND NEGATIVELY CHARGED AS VACANCIES IN GAAS [J].
AMBIGAPATHY, R ;
MANUEL, AA ;
HAUTOJARVI, P ;
SAARINEN, K ;
CORBEL, C .
PHYSICAL REVIEW B, 1994, 50 (04) :2188-2199
[3]   CHARACTERIZATION OF DEFECTS IN SI AND SIO2-SI USING POSITRONS [J].
ASOKAKUMAR, P ;
LYNN, KG ;
WELCH, DO .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :4935-4982
[4]   THE SPECTROSCOPY OF CRYSTAL DEFECTS - A COMPENDIUM OF DEFECT NOMENCLATURE [J].
BRIDGES, F ;
DAVIES, G ;
ROBERTSON, J ;
STONEHAM, AM .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (13) :2875-2928
[5]  
CHIBA T, 1995, MATER SCI FORUM, V175-, P327, DOI 10.4028/www.scientific.net/MSF.175-178.327
[6]  
Chiba T., 1989, Positron Annihilation, P674
[7]   INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].
DANNEFAER, S ;
DEAN, GW ;
KERR, DP ;
HOGG, BG .
PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714
[8]  
DANNEFAER S, 1990, DEFECT CONTROL SEMIC, P1561
[9]   AB-INITIO STUDY OF POSITRON TRAPPING AT A VACANCY IN GAAS [J].
GILGIEN, L ;
GALLI, G ;
GYGI, F ;
CAR, R .
PHYSICAL REVIEW LETTERS, 1994, 72 (20) :3214-3217
[10]  
HASEGAWA M, 1995, APPL PHYS A-MATER, V61, P65, DOI 10.1007/BF01538213