THE USEFULNESS OF A 400 KV HIGH-RESOLUTION ANALYTICAL ELECTRON-MICROSCOPE

被引：17

作者：

BANDO, Y ^{[1
]}

MATSUI, Y ^{[1
]}

UEMURA, Y ^{[1
]}

OIKAWA, T ^{[1
]}

SUZUKI, S ^{[1
]}

HONDA, T ^{[1
]}

HARADA, Y ^{[1
]}

机构：

[1] JEOL LTD,TOKYO 196,JAPAN

来源：

ULTRAMICROSCOPY | 1985年 / 18卷 / 1-4期

关键词：

400 KV ANALYTICAL EM - ELECTRON ENERGY-LOSS SPECTROSCOPY - ENERGY-DISPERSIVE X-RAY SPECTROSCOPY - PEAK/BACKGROUND RATIO - SILICON ALUMINUM OXYNITRIDE POLYTYPE;

D O I：

10.1016/0304-3991(85)90128-7

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：117 / 123

页数：7

共 9 条

[1]

BANDO Y, 1984, JEOL NEWS, V22, P28

[2]

BANDO Y, 1984, JPN J APPL PHYS, V23, pL414

[3]

COLLIEX C, ADV OPTICAL ELECTRON

[4]

HASHIMOTO H, 1983, 7TH P INT C HIGH VOL, P15

[5] SIALONS AND RELATED NITROGEN CERAMICS [J].

JACK, KH .

JOURNAL OF MATERIALS SCIENCE, 1976, 11 (06) :1135-1158

[6] PLURAL SCATTERING OF 20-KEV ELECTRONS IN ALUMINUM [J].

MARTON, L ;

SWANSON, N ;

SIMPSON, JA ;

FOWLER, HA .

PHYSICAL REVIEW, 1962, 126 (01) :182-&

[7]

ZALUZEC NJ, 1980, 38TH P ANN EMSA M SA, P112

[8]

ZALUZEC NJ, 1983, 7TH P INT C HIGH VOL, P81

[9]

ZANCHI G, 1983, 7TH P INT C HIGH VOL, P85

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