PRESSURE-RAMAN STUDIES OF SUBSTRATE-GENERATED INTERNAL STRAIN IN HETEROSTRUCTURES

被引：7

作者：

CUI, LJ

VENKATESWARAN, UD

WEINSTEIN, BA

CHAMBERS, FA

机构：

[1] Dept. of Phys., State Univ. of New York, Buffalo, NY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期

关键词：

D O I：

10.1088/0268-1242/6/6/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of pseudomorphic constraints on phonon pressure response in 2-constituent semiconductor heterostructures is investigated. Several hundred pressure-Raman measurements on different superlattices and bulk samples belonging to the GaAs/AlAs system are reported. Calculations of the internal superlattice strain in each constituent as a function of applied pressure are used to predict the induced shift of the LO(GAMMA) phonons. In agreement with theory, no statistically significant substrate or layer-thickness related differences could be measured for the LO(GAMMA) pressure coefficients in GaAs/AlAs heterostructures. Surprisingly, however, differences are observed for the 2TA(X) peak. Our calculations indicate that internal-strain effects can be an order of magnitude larger in other common epitaxial systems.

引用

页码：469 / 475

页数：7

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