2ND-HARMONIC GENERATION AND OPTICAL RECTIFICATION USING INTERSUBBAND TRANSITIONS IN A BIASED P-TYPE SEMICONDUCTOR QUANTUM-WELL

We present new theoretical results for the second-harmonic and optical rectification coefficients due to intersubband transitions within the valence subbands of a p-type quantum well in biased external electric field. The results are based on the density matrix approach. Both the parabolic band model and the heavy-hole/light-hole valence band mixing model are utilized. With a moderate electric field of 10 and 150 kV/cm, it is shown that the second-order susceptibilities are many times larger than those of bulk GaAs. The valence band mixing model also gives rise to a broader resonance phenomenon than the parabolic band model.