PLASMA NITROGEN DOPING OF ZNTE, CD1-XZNXTE, AND CDTE BY MOLECULAR-BEAM EPITAXY

被引：48

作者：

BARON, T ^{[1
]}

TATARENKO, S ^{[1
]}

SAMINADAYAR, K ^{[1
]}

MAGNEA, N ^{[1
]}

FONTENILLE, J ^{[1
]}

机构：

[1] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,F-38054 GRENOBLE 9,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.112096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The p-type doping of ZnTe, CdTe, and Cd1-xZn(x)Te (CZT) using a nitrogen dc plasma source during growth by molecular beam epitaxy is demonstrated. For ZnTe, doping levels as high as 10(20) cm-3 were achieved. In CZT alloys, a progressive decrease of the maximum doping level is observed for decreasing Zn content. Using pulse doping methods, a doping level of p almost-equal-to 3 x 10(18) cm-3 is obtained for a 12% Zn CZT layer. For CdTe layers, the highest level achieved is p almost-equal-to 10(17) cm-3. The progressive acceptor compensation phenomenon is discussed with emphasis on the role of the lattice distortion on the nitrogen incorporation mechanisms.

引用

页码：1284 / 1286

页数：3

共 15 条

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