FLUX GROWTH OF SILICATES WITH VAPOR TRANSPORTED SILICON

被引：16

作者：

WANKLYN, BM

HAUPTMAN, Z

机构：

[1] UNIV OXFORD,CLARENDON LAB,OXFORD,ENGLAND

[2] UNIV NEWCASTLE TYNE,SCH PHYS,DEPT GEOPHYS & PLANETARY PHYS,NEWCASTLE TYNE,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1974年 / 9卷 / 07期

关键词：

D O I：

10.1007/BF00552821

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1078 / 1082

页数：5

共 14 条

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[4]

BONDAR IA, 1968, RUSSIAN J INORG CHEM, V13, P3172

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OSMER, JA .

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[6]

Garton G., 1972, Journal of Crystal Growth, V13-14, P588, DOI 10.1016/0022-0248(72)90523-4

[7] FLUX GROWTH OF MGO AND LAALO3 CRYSTALS DOPED WITH ISOTOPE O-17 [J].

GARTON, G ;

HANN, BF ;

WANKLYN, BM ;

SMITH, SH .

JOURNAL OF CRYSTAL GROWTH, 1972, 12 (01) :66-&

[8]

HARRIS LA, 1965, AM MINERAL, V50, P1493

[9]

NOVOSELOVA AV, 1967, KRISTALL TECHNIK, V2, P511

[10] KOBALT(II)-ORTHOSILICATSYNTHESEN MITTELS SIO2-TRANSPORT UBER SIF4 UND REAKTION VON COF2 (FEST) MIT SIO2 (FEST) [J].

SCHMID, H .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1964, 327 (1-2) :110-112

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