ELECTRONS AND HOLES IN HGTE AND HG0.82CD0.18TE WITH CONTROLLED DEVIATIONS FROM STOICHIOMETRY

被引:30
作者
NISHIZAWA, J
SUTO, K
KITAMURA, M
SATO, M
TAKASE, Y
ITO, A
机构
[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN
[2] SEMICOND RES INST,SENDAI,JAPAN
关键词
D O I
10.1016/0022-3697(76)90176-1
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:33 / 42
页数:10
相关论文
共 30 条
[1]   ELECTRON EFFECTIVE MASS IN HG1-XCDXTE SYSTEM [J].
ALIEV, EM ;
ALIEV, SA ;
GADZHIEV, TG ;
ALIEV, MI .
PHYSICA STATUS SOLIDI, 1970, 40 (02) :K41-&
[2]   THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].
CONWELL, E ;
WEISSKOPF, VF .
PHYSICAL REVIEW, 1950, 77 (03) :388-390
[3]   SCREENING EFFECTS IN POLAR SEMICONDUCTORS [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :130-135
[4]  
FINK C, 1972, 11 P INT C PHYS SEM, P944
[5]  
FISHER G, 1960, HELV PHYS ACTA, V33, P463
[6]  
GALKIN AA, 1970, PHYS STATUS SOLIDI, V38, pK101
[7]  
GELMONT BL, 1972, 11 P INT C PHYS SEM, V2, P938
[8]   HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2 DEGREES K AND 77 DEGREES K [J].
HARMAN, TC ;
HONIG, JM ;
TRENT, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) :1995-&
[9]   GALVANO-THERMOMAGNETIC EFFECTS IN SEMICONDUCTORS AND SEMIMETALS .3. STANDARD AND KANE BAND MODELS [J].
HARMAN, TC ;
HONIG, JM ;
TARMY, BM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (07) :835-&
[10]  
IVANOVOMSKII VI, 1970, SOV PHYS SEMICOND+, V4, P214