ELECTRICAL-PROPERTIES OF A-SICX/A-SI HETEROJUNCTIONS

被引：2

作者：

NIEMANN, E

FISCHER, R

LEIDICH, D

LINHART, E

机构：

[1] AEG-Forschungsinstitut, Frankfurt, West Ger, AEG-Forschungsinstitut, Frankfurt, West Ger

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

SEMICONDUCTING SILICON - Amorphous - SEMICONDUCTOR MATERIALS - Doping - SILICON CARBIDE - Amorphous;

D O I：

10.1016/0022-3093(85)90827-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors have investigated the dependence of the I-V-characteristic of a-Si/a-SiC//x heterojunctions on the C- and P-content of a-SiC//x. The I-V-characteristic indicates the influence of a barrier for electrons in the case of P-doped a-SiC//x. No indication of a barrier for holes is found in the case of B-doped a-SiC//x. It is concluded, therefore, that the widening of the gap of a-SiC//x by the incorporation of C is chiefly due to a shift of the conduction band.

引用

页码：991 / 994

页数：4

共 4 条

[1]

ABELES B, 1984, C OPTICAL EFFECTS AM, P394

[2] PHOTOEMISSION-STUDIES OF A-SIXC1-X-H/A-SI AND A-SIXC1-X-H/HYDROGENATED AMORPHOUS-SILICON HETEROJUNCTIONS [J].