HREM OF COMPOUND SEMICONDUCTORS

被引：5

作者：

DECOOMAN, BC

CHO, NH

ELGAT, Z

CARTER, CB

机构：

来源：

关键词：

D O I：

10.1016/0304-3991(85)90148-2

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：305 / 312

页数：8

共 8 条

[1]

CARTER CB, 1981, I PHYS C SER, V60, P153

[2]

CHO NJ, UNPUB

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BOURRET, A .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (06) :783-807

[4]

DECOOMAN BC, 1985, P MATER RES SOC S, V37

[5] GRAIN BOUNDARIES IN SPHALERITE STRUCTURE [J].

HOLT, DB .

[6]

Kuesters K. H., 1985, Thirteenth International Conference on Defects in Semiconductors, P351

[7]

RALSTON J, UNPUB

[8] MOBILITY OF PARTIAL DISLOCATIONS IN SILICON [J].

WESSEL, K ;

ALEXANDER, H .

PHILOSOPHICAL MAGAZINE, 1977, 35 (06) :1523-1536