TIME-DOMAIN MEASUREMENTS OF SPIN RELAXATION PROCESSES OF DANGLING-BOND DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引:19
作者
ISOYA, J
YAMASAKI, S
MATSUDA, A
TANAKA, K
机构
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
[2] NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 69卷 / 02期
关键词
D O I
10.1080/01418639408240108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin relaxation processes of dangling-bond defects (g = 2.0055) in hydrogenated amorphous silicon (a-Si:H) and in deuterated amorphous silicon (a-Si:D) have been measured in the time domain by using the pulsed electron spin resonance technique. Phase relaxation measured as two-pulse echo decay is dominated by dipolar field fluctuations arising from hydrogen (or deuterium) nuclear spin flip-flops. The inversion recovery curves of a-Si:H and a-Si:D are similar, which indicates that hydrogen hyperfine interactions are not directly involved in the spin-lattice relaxation.
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页码:263 / 275
页数:13
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