TIME-DOMAIN MEASUREMENTS OF SPIN RELAXATION PROCESSES OF DANGLING-BOND DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

Spin relaxation processes of dangling-bond defects (g = 2.0055) in hydrogenated amorphous silicon (a-Si:H) and in deuterated amorphous silicon (a-Si:D) have been measured in the time domain by using the pulsed electron spin resonance technique. Phase relaxation measured as two-pulse echo decay is dominated by dipolar field fluctuations arising from hydrogen (or deuterium) nuclear spin flip-flops. The inversion recovery curves of a-Si:H and a-Si:D are similar, which indicates that hydrogen hyperfine interactions are not directly involved in the spin-lattice relaxation.