GROWTH OF UNTWINNED BI2SR2CA2CU3OX THIN-FILMS BY ATOMICALLY LAYERED EPITAXY

被引:73
作者
ECKSTEIN, JN [1 ]
BOZOVIC, I [1 ]
SCHLOM, DG [1 ]
HARRIS, JS [1 ]
机构
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
关键词
D O I
10.1063/1.104278
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO3 substrates. These films are c-axis oriented as-layered and do not exhibit 90°in-plane defects, i.e., a-b "twinning". By misorienting the surface normal from {100} by approximately 4°towards 〈111〉, the cubic symmetry of the {100} surface is adequately broken to completely align the b axis of the superconducting film with respect to the substrate. Reflection high-energy electron diffraction patterns observed during growth and post-growth x-ray diffraction analysis indicate that the incommensurate structural modulation occurs along the same direction as the step edges.
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页码:1049 / 1051
页数:3
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