ITERATED LINEAR-PROGRAMMING STRATEGIES FOR NONSMOOTH SIMULATION - A PENALTY BASED METHOD FOR VAPOR-LIQUID-EQUILIBRIUM APPLICATIONS

被引:27
作者
BULLARD, LG
BIEGLER, LT
机构
[1] Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh
基金
美国安德鲁·梅隆基金会;
关键词
D O I
10.1016/0098-1354(93)80007-A
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
We extend our iterated linear programming (LP) approach to two-phase vapor-liquid equilibrium problems, which are characterized by regions of continuous operation with nonsmooth boundaries. Here we show that a simple reformation allows us to handle the disappearance or reappearance of phases and thus allows us to solve a wider class of process problems. The proposed strategy uses a penalty function approach, called Penalty Simulation of Nonsmooth Algebraic Terms and Attributes (P-SONATA), to accommodate the nonsmooth nature of the system. To solve the vapor-liquid equilibrium problem, we also extend the theoretical results of our approach to characterize descent and convergence properties for P-SONATA. The performance of this formulation is demonstrated for process models involving phase equilibrium, such as transitions from one and two phases in flash and distillation problems, where mass and energy balances must be satisfied but the phase equilibrium expression can be relaxed. Isothermal flash problems with ideal and nonideal phase equilibrium relations are considered as well as a case which exhibits retrograde condensation behavior near the critical point. Finally, we examine limiting distillation cases including columns operating below the minimum reflux ratio (resulting in dry trays) and below the minimum reboiler heat duty (resulting in vaporless trays). Finally, we develop convergence properties for P-SONATA and discuss additional classes for nonsmooth problems. The results demonstrate that this approach is straightforward to implement, captures a wider range of phase equilibrium behavior and otherwise performs competitively with conventional Newton-based approaches.
引用
收藏
页码:95 / 109
页数:15
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