NATIVE POINT-DEFECTS AND NONSTOICHIOMETRY IN GAAS .2. MECHANISM OF FORMATION AND DEGRADATION OF SEMIINSULATING PROPERTIES OF UNDOPED GALLIUM-ARSENIDE CRYSTALS

被引：14

作者：

MOROZOV, AN

BUBLIK, VT

MOROZOVA, OY

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 07期

关键词：

D O I：

10.1002/crat.2170210711

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：859 / 865

页数：7

共 19 条

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[4]

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[5]

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[8] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

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ELDRIDGE, GW ;

BARRETT, DL ;

THOMAS, RN .

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[9] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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CHEN, RT ;

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[10]

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