共 11 条
[1]
ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110)
[J].
PHYSICAL REVIEW B,
1983, 27 (02)
:1251-1258
[2]
DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML)
[J].
PHYSICAL REVIEW B,
1982, 26 (02)
:803-814
[3]
LAFEMINA J, 1990, J VAC SCI TECHNOL B, V4, P888
[4]
SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE
[J].
PHYSICAL REVIEW B,
1985, 31 (04)
:2213-2229
[5]
MARTENSSON P, 1986, PHYS REV B, V33, P7399, DOI 10.1103/PhysRevB.33.7399
[7]
BULK AND SURFACE ELECTRONIC BANDS OF INP(110) DETERMINED BY ANGLE-RESOLVED PHOTOEMISSION
[J].
PHYSICAL REVIEW B,
1987, 36 (15)
:8075-8081
[8]
THE ELECTRONIC-STRUCTURE OF CLEAVED INDIUM-PHOSPHIDE (110) SURFACES - EXPERIMENT AND THEORY
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1983, 16 (18)
:3627-3640
[9]
THE GROWTH OF BISMUTH AND ANTIMONY OVERLAYERS ON INP(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1990, 8 (04)
:674-679
[10]
WHITTLE R, 1991, BESSY1990 ANN REP, P323