ELECTRONIC-STRUCTURE OF NANOMETER-THICKNESS SI(001) FILM

被引：5

作者：

GAVRILENKO, VI

KOCH, F

机构：

[1] Technische Universität München, Physik Department E 16

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.358683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A tight-binding calculation of a Si film with nanometer dimensions is presented. We study the electron energy structure and the wave functions of a pristine Si-quantum film and one covered with hydrogen. A total energy minimization method, in the framework of self-consistent tight-binding theory, is used to investigate the reconstruction of the Si-surface after the adsorption of hydrogen. The dependence of the electron energy spectrum on the film thickness and the atomic structure of the surface is studied. © 1995 American Institute of Physics.

引用

页码：3288 / 3294

页数：7

共 26 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] TOTAL ENERGY MINIMIZATION FOR SURFACES OF COVALENT SEMICONDUCTORS C, SI, GE, AND ALPHA-SN .2. (100)2X1 SURFACES [J].