IMPURITY-CONCENTRATION PROFILE FOR AN EXPONENTIALLY DECAYING DIFFUSION-COEFFICIENT IN IRRADIATION ENHANCED DIFFUSION

被引：17

作者：

KOWALL, J ^{[1
]}

PEAK, D ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY, PHYS DEPT, ALBANY, NY 12222 USA

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.13.477

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：477 / 478

页数：2

共 9 条

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[2]

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[5]

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[6] CHARGE-STATE EFFECTS IN DISPLACEMENT DAMAGE [J].

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BOURGOIN, JC .

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[7]

CRANK J, 1970, MATHEMATICS DIFFUSIO, P82

[8]

Kimerling L. C., 1975, Lattice Defects in Semiconductors, 1974, P126

[9] IMPURITY CONCENTRATION PROFILE IN IRRADIATION ENHANCED DIFFUSION EXPERIMENTS [J].

STPETERS, MA ;

PEAK, D ;

CORBETT, JW .

PHYSICS LETTERS A, 1974, A 49 (02) :159-160

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