REFRACTIVE-INDEX OF ION-IMPLANTED GAAS

被引：35

作者：

KACHARE, AH

SPITZER, WG

FREDRICKSON, JE

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

[2] CALIF STATE UNIV LONG BEACH,DEPT PHYS ASTRON,LONG BEACH,CA 90840

[3] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.323292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4209 / 4212

页数：4

共 12 条

[1]

ANKERMAN LW, 1963, J APPL PHYS, V34, P3590

[2]

ARNOLD GW, 1973, ION IMPLANTATION SEM, P49

[3] OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE [J].

CLARK, GD ;

HOLONYAK, N .

PHYSICAL REVIEW, 1967, 156 (03) :913-+

[4]

COATES R, 1972, RADIATION DAMAGE DEF, P96

[5] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

CROWDER, BL ;

TITLE, RS ;

BRODSKY, MH ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7]

HEAVENS OS, 1964, OPTICAL PROPERTIES T, P76

[8] INFRARED REFLECTION AND RAMAN-SCATTERING OF ION-IMPLANTED NITROGEN IN GALLIUM-PHOSPHIDE [J].

KACHARE, AH ;

CHERLOW, JM ;

YANG, TT ;

SPITZER, WG ;

EULER, FK .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :161-173

[9] INFRARED REFLECTION OF ION-IMPLANTED GAAS [J].

KACHARE, AH ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :2938-2946

[10] THEORY OF ANOMALOUS INFRARED ATTENUATION IN NEUTRON-IRRADIATED COMPOUND SEMICONDUCTORS [J].

MCNICHOLS, JL ;

GINELL, WS .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :656-+

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