SPECTRAL RESPONSE OF PB-SNTE DETECTORS

被引：9

作者：

ELLIS, B ^{[1
]}

机构：

[1] ROYAL AIRCRAFT ESTAB,FARNBOROUGH GU14 6TD,HAMPSHIRE,ENGLAND

来源：

INFRARED PHYSICS | 1977年 / 17卷 / 05期

关键词：

D O I：

10.1016/0020-0891(77)90038-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：365 / 374

页数：10

共 14 条

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[2]

CALAWA AR, 1968, T METALL SOC AIME, V242, P374

[3] PERFORMANCE OF PBSNTE DIODES AT MODERATELY REDUCED BACKGROUNDS [J].

CHIA, PS ;

BALON, JR ;

LOCKWOOD, AH ;

RANDALL, DM ;

RENDA, FJ ;

DEVAUX, LH ;

KIMURA, H .

INFRARED PHYSICS, 1975, 15 (04) :279-285

[4] CRYSTAL-GROWTH AND ISOTHERMAL ANNEALING OF PB1-XSNXTE ALLOYS [J].

DIONNE, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :784-&

[5] CYCLOTRON RESONANCE IN PB1-XSNXTE [J].

ELLIS, B ;

MOSS, TS .

PHYSICA STATUS SOLIDI, 1970, 41 (02) :531-&

[6]

ELLIS B, 1969, J PHYS CHEM SOL S, P211

[7]

ELLIS B, 1973, P INT C SEMICONDUCTO

[8] ANNEALING STUDIES OF PBTE AND PB1-XSNXTE [J].

HEWES, CR ;

ADLER, MS ;

SENTURIA, SD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1327-1332

[9]

Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]

[10]

Moss T. S., 1973, SEMICONDUCTOR OPTO E, DOI 10.1016/C2013-0-04197-7

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