GAINASP/INP SBH SURFACE-EMITTING LASER WITH SI/AL2O3 MIRROR

被引：9

作者：

UCHIYAMA, S

KASHIWA, S

机构：

[1] Optoelectronics Furukawa Laboratory, Real World Computing Partnership, c/o Yokohama R&D Laboratories, Furukawa Electric Co. Ltd., Yokohama 220, 2-4-3 Okano, Nishi-ku

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 17期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; OPTICAL FILMS;

D O I：

10.1049/el:19950985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Si/Al2O3 mirror has been introduced into the p-side mirror of a 1.3 mu m GaInAsP/lnP square buried heterostructure (SBH) surface emitting (SE) laser to decrease thermal resistance. The low threshold pulsed oscillation (threshold current I-th = 12mA) has bren obtained for an 8 x 8 mu m device at room temperature. Its threshold current density was similar to 18kA/cm(2). Near room temperature (13 degrees C) CW oscillation for another chip has also been realised.

引用

页码：1449 / 1451

页数：3

共 6 条

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[2]

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[3]

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[4]

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[5]

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[6]

UCTHYAMA S., KASHIWA S., 1.3µm GaInAsP/lnP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVD, Proc. 7th Int. Conf. on Indium Phosphide and Related Materials, pp. 488-491, (1995)

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