SATURATION OF PHOTOVOLTAGE AND PHOTOCURRENT IN P-N-JUNCTION SOLAR-CELLS

被引：41

作者：

DHARIWAL, SR

KOTHARI, LS

JAIN, SC

机构：

[1] UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA

[2] GOVT COLL, DEPT PHYS, AJMER, RAJASTHAN, INDIA

[3] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 05期

关键词：

D O I：

10.1109/T-ED.1976.18436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：504 / 507

页数：4

共 9 条

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[6]

JONSCHER AK, 1960, PRINCIPLES SEMICONDU

[7] COMMENTS ON SATURATED PHOTOVOLTAGE OF A P-N JUNCTION [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :384-&

[8] PHOTOVOLTAIC EFFECT IN PHOTOCONDUCTORS [J].

KEATING, PN .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :564-&

[9] SATURATED PHOTOVOLTAGE OF A P-N-JUNCTION [J].

PARROTT, JE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :89-93

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