RESISTIVITY OF POROUS SILICON - A SURFACE EFFECT

被引：114

作者：

LEHMANN, V ^{[1
]}

HOFMANN, F ^{[1
]}

MOLLER, F ^{[1
]}

GRUNING, U ^{[1
]}

机构：

[1] TECH UNIV MUNICH,W-8046 GARCHING,GERMANY

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

ELECTRICAL PROPERTIES AND MEASUREMENTS; ETCHING; SILICON;

D O I：

10.1016/0040-6090(94)05624-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For micro- and mesoporous silicon samples a decrease in conductivity by several orders of magnitude as compared with the substrate is observed. Since the structures in mesoporous silicon are too large to show significant quantum confinement, models for the decreased conduction based on quantum confinement are not applicable. A new model for the charge transport mechanism based on constrictions of conductive pathways produced by charged surface traps is proposed and verified in experiments.

引用

页码：20 / 22

页数：3

共 10 条

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].